Low fabrication cost, fine pitch and high reliability solder bump

ABSTRACT

A barrier layer is deposited over a layer of passivation including in an opening to a contact pad created in the layer of passivation. A column of three layers of metal is formed overlying the barrier layer and aligned with the contact pad and having a diameter that is about equal to the surface of the contact pad. The three metal layers of the column comprise, in succession when proceeding from the layer that is in contact with the barrier layer, a layer of pillar metal, a layer of under bump metal and a layer of solder metal. The layer of pillar metal is reduced in diameter, the barrier layer is selectively removed from the surface of the layer of passivation after which reflowing of the solder metal completes the solder bump of the invention.

BACKGROUND OF THE INVENTION

(1) Field of the Invention

The invention relates to the fabrication of integrated circuit devices,and more particularly, to a method of creating a reliable, fine pitchsolder bump at low cost.

(2) Description of the Prior Art

Semiconductor device packaging has over the years received increasedemphasis due to a continued decrease in semiconductor device featuresize, a decrease that is driven by the dual requirements of improveddevice performance and reduced device manufacturing cost. This trend hasled to a significant increase in semiconductor device density, whichplaces increased emphasis on device or package I/O capabilities. Themetal connections, which connect the Integrated Circuit to othercircuits or to system components, have therefore become more importantand can, with further miniaturization of the semiconductor device, havean increasingly negative impact on circuit performance. Increasingparasitic capacitance and resistance of the metal interconnections cansignificantly degrade chip performance. Of most concern in this respectis the voltage drop along the power and ground buses and the RC delay ofthe critical signal paths. Attempts to reduce the resistance by usingwider metal lines result in higher capacitance of these wires.

One of the approaches that has been taken to solve these packagingproblems is to develop low resistance metals (such as copper) for theinterconnect wires, while low dielectric constant materials are beingused in between signal lines. Another approach to solve problems of I/Ocapability has been to design chips and chip packaging techniques thatoffer dependable methods of increased interconnecting of chips at areasonable manufacturing cost. This has led to the development of FlipChip Packages.

Flip-chip technology fabricates bumps (typically Pb/Sn solders) on Alpads on the chips and interconnects the bumps directly to the packagemedia, which are usually ceramic or plastic based. The flip-chip isbonded face down to the package medium through the shortest paths. Thesetechnologies can be applied not only to single-chip packaging, but alsoto higher or integrated levels of packaging in which the packages arelarger, and to more sophisticated substrates that accommodate severalchips to form larger functional units.

The flip-chip technique, using an array of I/O interconnects has theadvantage of achieving the highest density of interconnection to thedevice combined with a very low inductance interconnection to thepackage. However, pre-testability, post-bonding visual inspection, andCoefficient of Thermal Expansion (CTE) matching to avoid solder bumpfatigue are still challenges. In mounting several packages together,such as surface mounting a ceramic package to a plastic board, the TCEmismatch can cause a large thermal stress on the solder-lead joints thatcan lead to joint breakage caused by solder fatigue from temperaturecycling operations.

Prior Art substrate packaging uses ceramic and plastic flip chippackaging. Ceramic substrate packaging is expensive and has proven tolimit the performance of the overall package. Recent years has seen theemergence of plastic substrate flip chip packaging, this type ofpackaging has become the main stream design and is frequently used inhigh volume flip chip package fabrication. The plastic substrate flipchip package performs satisfactorily when used for low-density flip chipIntegrated Circuits (IC's). If the number of pins emanating from the ICis high, that is in excess of 350 pins, or if the number of pins comingfrom the IC is less than 350 but the required overall package size issmall, the plastic flip chip structure becomes complicated andexpensive. This can be traced to the multi-layer structure used tocreate the plastic flip chip package. This multi-layer structure resultsin a line density within the package of typically 2-3 mil range. Thisline density is not sufficiently high for realizing the fan out from thechip I/O to the solder balls on the package within a single layer,leading to the multi-layer approach. The multi-layer approach bringswith it the use of relatively thick (50 to 75 μm) dielectric layers,these layers have a Coefficient of Thermal Expansion (CTE) that isconsiderably higher than the CTE of the laminate board on which theplastic flip chip package is mounted. To counteract this difference inCTE's the overall package must be (thermally and mechanically) balancedresulting in the use of additional material and processing steps toapply these materials, increasing the cost of the Ball Grid Array (BGA)package and creating a yield detractor.

In creating semiconductor devices, the technology of interconnectingdevices and device features is a continuing challenge in the era ofsub-micron devices. Bond pads and solder bumps are frequently used forthis purpose, whereby continuous effort is dedicated to creating bondpads and solder bumps that are simple, reliable and inexpensive.

Bond pads are generally used to wire device elements and to provideexposed contact regions of the die. These contact regions are suitablefor wiring the die to components that are external to the die. Anexample is where a bond wire is attached to a bond pad of asemiconductor die at one end and to a portion of a Printed Circuit Boardat the other end of the wire. The art is constantly striving to achieveimprovements in the creation of bond pads that simplify themanufacturing process while enhancing bond pad reliability.

Materials that are typically used for bond pads include metallicmaterials, such as tungsten and aluminum, while heavily dopedpolysilicon can also be used for contacting material. The bond pad isformed on the top surface of the semiconductor device whereby theelectrically conducting material is frequently embedded in an insulatinglayer of dielectric. In using polysilicon as the bond pad material,polysilicon can be doped with an n-type dopant for contacting N-regionswhile it can be doped with p-type dopant for contacting P-regions. Thisapproach of doping avoids inter-diffusion of the dopants and dopantmigration. It is clear that low contact resistance for the bond pad areais required while concerns of avoidance of moisture or chemical solventabsorption, thin film adhesion characteristics, delamination andcracking play an important part in the creation of bond pads.

The conventional processing sequence that is used to create an aluminumbond pad starts with a semiconductor surface, typically the surface of asilicon single crystalline substrate. A layer of Intra Metal Dielectric(IMD) is deposited over the surface, a layer of metal, typicallyaluminum, is deposited over the surface of the layer of IMD. The layerof metal is patterned and etched typically using a layer of photoresistand conventional methods of photolithography and etching. After a bondpad has been created in this manner, a layer of passivation is depositedover the layer of IMD. An opening that aligns with the bond pad iscreated in the layer of passivation, again using methods ofphotolithography and etching.

A conventional method that is used to create a solder bump over acontact pad is next highlighted. FIGS. 1 through 4 show an example ofone of the methods that is used to create an interconnect bump. Asemiconductor surface 10 has been provided with a metal contact pad 14,the semiconductor surface 10 is protected with a layer 12 ofpassivation. An opening 19 has been created in the layer 12 ofpassivation, the surface of the metal contact pad 14 is exposed throughthis opening 19. Next, FIG. 2, a dielectric layer 16 is deposited overthe surface of the layer 12 of passivation. The layer 16 of dielectricis patterned and etched, creating an opening 21 in the layer 16 ofdielectric that aligns with the metal pad 14 and that partially exposesthe surface of the metal pad 14. A layer 18 of metal, typically usingUnder-Bump-Metallurgy (UBM), is created over the layer 16 of dielectric,layer 18 of metal is in contact with the surface of the metal pad 14inside opening 21. The region of layer 18 of metal that is above themetal pad 14 will, at a later point in the processing, form a pedestalover which the interconnect bump will be formed. This pedestal can befurther extended in a vertical direction by the deposition andpatterning of one or more additional layers that may contain aphotoresist or a dielectric material, these additional layers are notshown in FIG. 2. These layers essentially have the shape of layer 16 andare removed during one of the final processing steps that is applied forthe formation of the interconnect bump.

A layer of photoresist (not shown) is deposited, patterned and etched,creating an opening that aligns with the contact pad 14. A layer 20 ofmetal, such as copper or nickel, FIG. 3, that forms an integral part ofthe pedestal of the to be created interconnect bump, is nextelectroplated in the opening created in the layer of photoresist and onthe surface of the layer 18 of metal, whereby the layer 18 serves as thelower electrode during the plating process. Layer 20 in prior artapplications has a thickness of between about 1 and 10 μm with a typicalvalue of about 5 μm. The final layer 22 of solder is electroplated onthe surface of layer 20. The patterned layer of photoresist is thenremoved.

The layer 18 of metal is next etched, FIG. 4, leaving in place only thepedestal for the interconnect bump. During this etch process thedeposited layers 20 and 22 serve as a mask. If, as indicated above,additional layers of dielectric or photoresist have been deposited forthe further shaping of pedestal 18 in FIG. 2, these layers are alsoremoved at this time.

A solder paste or flux (not shown) is now applied to the layer 22 ofsolder, the solder 22 is melted in a reflow surface typically under anitrogen atmosphere, creating the spherically shaped interconnect bump22 that is shown in FIG. 4.

In addition to the above indicated additional layers of dielectric orphotoresist that can be used to further shape the pedestal of theinterconnect bump, many of the applications that are aimed at creatinginterconnect bumps make use of layers of metal that serve as barrierlayers or that have other specific purposes, such as the improvement ofadhesion of the various overlying layers or the prevention of diffusionof materials between adjacent layers. These layers collectively formlayer 18 of FIG. 4 and have, as is clear from the above, an effect onthe shape of the completed bump and are therefore frequently referred toas Ball Limiting Metal (BLM) layer. Frequently used BLM layers aresuccessive and overlying layers of chrome, copper and gold, whereby thechrome is used to enhance adhesion with an underlying aluminum contactpad, the copper layer serves to prevent diffusion of solder materialsinto underlying layers while the gold layer serves to prevent oxidationof the surface of the copper layer. The BLM layer is layer 18 of FIGS. 2through 4.

Increased device density brings with it increased closeness ofcomponents and elements that are part of the created semiconductordevices. This increased closeness is expressed as a reduction in thespacing or “pitch” between elements of a semiconductor device.State-of-the-art technology uses solder bumps having a pitch of about200 μm, which imposes a limitation on further increasing device density.The limitation in further reducing the pitch of solder bumps is imposedby concerns of reliability, which impose a relatively large ball sizefor the solder bump. This relatively large solder ball restricts furtherreducing the solder ball pitch.

In the majority of applications, solder bumps are used asinterconnections between I/O bond pads and a substrate or printedcircuit board. Large solder balls bring with it high standoff since asolder ball with high standoff has better thermal performance (CTEmismatching is easier to avoid resulting in reduced thermal stress onthe solder balls). Large solder balls are therefore required in order tomaintain interconnect reliability. Low-alpha solder is applied to avoidsoft error (electrical or functional errors) from occurring, therebyeliminating the potential for inadvertent memory discharge and incorrectsetting of the voltage (1 or 0).

U.S. Pat. No. 6,162,652 (Dass et al.) provides for the testing of anintegrated circuit device including depositing a solder bump on asurface of a bond pad.

U.S. Pat. No. 5,756,370 (Farnworth et al.) provides a compliant contactsystem for making temporary connection with a semiconductor die fortesting and a method for fabricating the pliable contact system.

U.S. Pat. No. 5,554,940 (Hubacker) addresses the probing ofsemiconductor devices that have been provided with contact bumps and theformation of peripheral test pads.

U.S. Pat. No. 5,665,639 (Seppala et al.), U.S. Pat. No. 6,051,450(Ohsawa et al.) and U.S. Pat. No. 5,882,957 (Lin) show related bumpprocesses.

U.S. Pat. No. 5,633,535 (Chao et al.) shows a pedestal process using dryresist.

U.S. Pat. No. 6,103,552 (Lin) provides a process and package forachieving wafer scale packaging, which includes formation of a solderbump.

SUMMARY OF THE INVENTION

A principal objective of the invention is to provide a method ofcreating a fine-pitch solder bump.

Another objective of the invention is to provide a method of creatingsmaller solder bumps, further allowing for the creation of fine-pitchedsolder bumps.

Another objective of the invention is to provide a cost-effective methodto create a fine-pitch solder bump of high reliability, due to theincreased height of the solder bump. This objective is based on thebelieve that solder bump reliability improves proportionally to thesquare of the distance between the solder ball and the underlyingsubstrate.

Another objective of the invention is to provide a cost-effective way ofcreating a solder bump. This cost-effective way is realized by usingstandard solder material and therewith eliminating the need forexpensive “low-α solder”.

Another objective of the invention is to provide a cost-effective methodof creating a fine-pitch solder bump by reducing the alpha-effect onmemory products.

Another objective of the invention is to provide a method of creatingsolder bumps which allows an easy method of cleaning flux after theprocess of creating the solder bump has been completed.

Another objective of the invention is to provide a method of creatingsolder bumps which allows easy application of underfill.

In accordance with the process of the invention, a contact pad is formedon a semiconductor surface, overlying a layer of dielectric. A layer ofpassivation is deposited over the layer of dielectric for the protectionof the contact pad, an opening is created in the layer of passivationthat partially exposes the surface of the contact pad. A barrier layeris deposited over the layer of passivation including the opening createdin the layer of passivation. A column of three layers of metal is formedoverlying the barrier layer and aligned with the contact pad and havinga diameter that is about equal to the surface of the contact pad. Thethree metal layers of the column comprise, in succession when proceedingfrom the layer that is in contact with the barrier layer, a layer ofpillar metal, a layer of under bump metal and a layer of solder metal.The layer of pillar metal is reduced in diameter, the barrier layer isselectively removed from the surface of the layer of passivation afterwhich reflowing of the solder metal completes the solder bump of theinvention.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1 through 4 show a prior art method of creating a solder bumpoverlying a point of electrical contact, as follows:

FIG. 1 shows a cross section of a semiconductor surface on the surfaceof which a contact pad has been created, the semiconductor surface iscovered with a patterned layer of passivation.

FIG. 2 shows the cross section of FIG. 1 after a patterned layer ofdielectric and a layer of metal have been created on the semiconductorsurface.

FIG. 3 shows a cross section of FIG. 2 after a layer of bump metal andsolder compound have been selectively deposited.

FIG. 4 show a cross section after excessive layers have been removedfrom the semiconductor surface and after the solder has been reflowed,forming the interconnect bump.

FIGS. 5 through 16 address the invention, as follows:

FIGS. 5 and 6 show a cross section of completed solder bumps of theinvention.

FIG. 7 shows a cross section of a semiconductor surface, a layer ofdielectric has been deposited, metal pads have been created, a layer ofpassivation has been deposited and patterned, a layer of barriermaterial has been deposited.

FIG. 8 shows a cross section after a patterned layer of photoresist hasbeen created over the structure of FIG. 7.

FIG. 9 shows a cross section after pillar metal has been created alignedwith the metal pads, under bump metal has been deposited over thesurface of the pillar metal.

FIG. 10 shows a cross section after solder metal has been plated overthe under bump metal.

FIG. 11 shows a cross section after the patterned layer of photoresisthas been removed from the surface.

FIG. 12 shows a cross section after the diameter of the pillar metal hasbeen reduced.

FIG. 13 shows a cross section after the barrier layer has been etchedusing isotropic etching, creating a first profile.

FIG. 14 shows a cross section after the barrier layer has been etchedusing anisotropic etching or RIE, creating a second profile.

FIG. 15 shows a cross-section after the solder metal of the firstprofile has been reflowed.

FIG. 16 shows a cross-section after the solder metal of the secondprofile has been reflowed.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

Referring now specifically to FIG. 5, there is shown a cross section ofcompleted solder bumps of the invention having a first profile. The termprofile refers to the difference in which, during one of the final stepsof the creation of the solder bumps, the layer of barrier metal isetched.

For the first profile of the solder bumps of the invention, an isotropicetch of the exposed barrier metal is performed, removing the exposedbarrier metal except for where this barrier metal underlies the pillarmetal of the invention.

For the second profile of the solder bumps of the invention, ananisotropic etch of the exposed barrier metal is performed, removing theexposed barrier metal except where the barrier metal is shielded fromthe anisotropic etch by the solder bump, prior to reflow of the solderbump.

Shown in cross section in FIG. 5 is the first profile of the solder bumpof the invention, the elements of this solder bump are:

-   -   10, the semiconductor surface over which the solder bump is        created, typically the surface of a silicon semiconductor        substrate    -   30, a layer of dielectric that has been deposited over the        semiconductor surface 10    -   32, contact pads that have been created on the surface of the        layer 30 of dielectric    -   34, a patterned layer of passivation that has been deposited        over the surface of the layer 30 of dielectric; openings have        been created in the layer 34 of passivation, partially exposing        the surface of contact pads 32    -   36, an isotropically etched layer of barrier metal; because this        layer of barrier metal has been isotropically etched, the        barrier metal has been completely removed from the surface of        the layer 34 of passivation except where the barrier metal is        covered by the overlying pillar metal (38) of the solder bump    -   38, the pillar metal of the solder bump    -   40, a layer of under bump metal created overlying the pillar        metal 38 of the solder bump    -   42, the solder metal.

Shown in cross section in FIG. 6 is the second profile of the solderbump of the invention, the elements of this solder bump are the same asthe elements that have been described above for the first profile of thesolder bump of the invention with the exception of layer 35 which is ananisotropically etched layer of barrier metal which, due to the natureof the anisotropic etch, protrudes for the pillar metal 38 as shown inthe cross section of FIG. 6.

FIGS. 7 through 16 provide detail of the process of the invention whichleads to the solder bumps that have been shown in cross section in FIGS.5 and 6.

FIG. 7 shows a cross section of substrate 10 on the surface, thefollowing elements are highlighted:

-   -   10, a silicon substrate over the surface of which metal contact        pads 32 have been created    -   30, a layer of dielectric that has been deposited over the        surface of substrate 10    -   32, the metal contact pads, typically comprising aluminum,        created over the surface of the layer 30 of dielectric    -   34, a layer of passivation that has been deposited over the        surface of the layer 30 of dielectric. Openings have been        created in the layer 34 of passivation that align with the metal        contact pads 32, partially exposing the surface of the contact        pads 32    -   36, a layer of barrier metal that has been created over the        surface of layer 34 of passivation, including the openings that        have been created in the layer 34 of passivation, contacting the        underlying contact pads 32.

As dielectric material for layer 30 can be used any of the typicallyapplied dielectrics such as silicon dioxide (doped or undoped), siliconoxynitride, parylene or polyimide, spin-on-glass, plasma oxide or LPCVDoxide. The material that is used for the deposition of layer 30 ofdielectric of the invention is not limited to the materials indicatedabove but can include any of the commonly used dielectrics in the art.

The creation of metal contact pads 32 can use conventional methods ofmetal rf sputtering at a temperature between about 100 and 400 degreesC. and a pressure between about 1 and 100 mTorr using as source forinstance aluminum-copper material (for the creation of aluminum contactpads) at a flow rate of between about 10 and 400 sccm to a thicknessbetween about 4000 and 11000 Angstrom. After a layer of metal has beendeposited, the layer must be patterned and etched to create the aluminumcontact pads 32. This patterning and etching uses conventional methodsof photolithography and patterning and etching. A deposited layer ofAlCu can be etched using Cl₂/Ar as an etchant at a temperature between50 and 200 degrees C., an etchant flow rate of about 20 sccm for the Cl₂and 1000 sccm for the Ar, a pressure between about 50 mTorr and 10 Torr,a time of the etch between 30 and 200 seconds.

In a typical application insulating layers, such as silicon oxide andoxygen-containing polymers, are deposited using Chemical VaporDeposition (CVD) technique over the surface of various layers ofconducting lines in a semiconductor device or substrate to separate theconductive interconnect lines from each other. The insulating layers canalso deposited over patterned layers of interconnecting lines,electrical contact between successive layers of interconnecting lines isestablished with metal vias created in the insulating layers. Electricalcontact to the chip is typically established by means of bonding pads orcontact pads that form electrical interfaces with patterned levels ofinterconnecting metal lines. Signal lines and power/ground lines can beconnected to the bonding pads or contact pads. After the bonding pads orcontact pads have been created on the surfaces of the chip, the bondingpads or contact pads are passivated and electrically insulated by thedeposition of a passivation layer over the surface of the bonding pads.A passivation layer can contain silicon oxide/silicon nitride(SiO₂/Si₃N₄) deposited by CVD. The passivation layer is patterned andetched to create openings in the passivation layer for the bonding padsor contact pads after which a second and relatively thick passivationlayer can be deposited for further insulation and protection of thesurface of the chips from moisture and other contaminants and frommechanical damage during assembling of the chips.

Various materials have found application in the creation of passivationlayers. Passivation layer can contain silicon oxide/silicon nitride(SiO₂/Si₃N₄) deposited by CVD, a passivation layer can be a layer ofphotosensitive polyimide or can comprise titanium nitride. Anothermaterial often used for a passivation layer is phosphorous doped silicondioxide that is typically deposited over a final layer of aluminuminterconnect using a Low Temperature CVD process. In recent years,photosensitive polyimide has frequently been used for the creation ofpassivation layers. Conventional polyimides have a number of attractivecharacteristics for their application in a semiconductor devicestructure, which have been highlighted above. Photosensitive polyimideshave these same characteristics but can, in addition, be patterned likea photoresist mask and can, after patterning and etching, remain on thesurface on which it has been deposited to serve as a passivation layer.Typically and to improve surface adhesion and tension reduction, aprecursor layer is first deposited by, for example, conventionalphotoresist spin coating. The precursor is, after a low temperaturepre-bake, exposed using, for example, a step and repeat projectionaligner and Ultra Violet (UV) light as a light source. The portions ofthe precursor that have been exposed in this manner are cross-linked,thereby leaving unexposed regions (that are not cross-linked) over thebonding pads. During subsequent development, the unexposed polyimideprecursor layer (over the bonding pads) is dissolved, thereby providingopenings over the bonding pads. A final step of thermal curing leaves apermanent high quality passivation layer of polyimide over thesubstrate.

The preferred material of the invention for the deposition of layer 34of passivation is Plasma Enhanced silicon nitride (PE Si₃N₄), depositedusing PECVD technology at a temperature between about 350 and 450degrees C. with a pressure of between about 2.0 and 2.8 Torr for theduration between about 8 and 12 seconds. Layer 32 of PE Si₃N₄ can bedeposited to a thickness between about 200 and 800 Angstrom.

Layer 34 of PE Si₃N₄ is next patterned and etched to create openings inthe layer 34 that overlay and align with the underlying contact pads 32.

The etching of layer 34 of passivation can use Ar/CF₄ as an etchant at atemperature of between about 120 and 160 degrees C. and a pressure ofbetween about 0.30 and 0.40 Torr for a time of between about 33 and 39seconds using a dry etch process.

The etching of layer 34 of passivation can also use He/NF₃ as an etchantat a temperature of between about 80 and 100 degrees C. and a pressureof between about 1.20 and 1.30 Torr for a time of between about 20 and30 seconds using a dry etch process.

Barrier layers, such as layer 36, are typically used to preventdiffusion of an interconnect metal into surrounding layers of dielectricand silicon. Some of the considerations that apply in selecting amaterial for the barrier layer become apparent by using copper forinterconnect metal as an example. Although copper has a relatively lowcost and low resistivity, it has a relatively large diffusioncoefficient into silicon dioxide and silicon and is therefore nottypically used as an interconnect metal. Copper from an interconnect maydiffuse into the silicon dioxide layer causing the dielectric to beconductive and decreasing the dielectric strength of the silicon dioxidelayer. Copper interconnects should be encapsulated by at least onediffusion barrier to prevent diffusion into the silicon dioxide layer.Silicon nitride is a diffusion barrier to copper, but the prior artteaches that the interconnects should not lie on a silicon nitride layerbecause it has a high dielectric constant compared with silicon dioxide.The high dielectric constant causes a desired increase in capacitancebetween the interconnect and the substrate.

A typical diffusion barrier layer may contain silicon nitride,phosphosilicate glass (PSG), silicon oxynitride, aluminum, aluminumoxide (Al_(x)O_(y)), tantalum, Ti/TiN or Ti/W, nionbium, or molybdenumand is more preferably formed from TiN. The barrier layer can also beused to improve the adhesion of the subsequent overlying tungsten layer.

A barrier layer is preferably about 500 and 2000 angstrom thick and morepreferably about 300 angstrom thick and can be deposited using rfsputtering.

After the creation of barrier layer 36, a seed layer (not shown in FIG.7) can be blanket deposited over the surface of the wafer. For a seedlayer that is blanket deposited over the surface of the wafer any of theconventional metallic seed materials can be used. The metallic seedlayer can be deposited using a sputter chamber or an Ion Metal Plasma(IMP) chamber at a temperature of between about 0 and 300 degrees C. anda pressure of between about 1 and 100 mTorr, using (for instance) copperor a copper alloy as the source (as highlighted above) at a flow rate ofbetween about 10 and 400 sccm and using argon as an ambient gas.

FIG. 8 shows a cross section of the substrate after a layer 37 ofphotoresist has been deposited over the surface of the barrier layer 36.The layer 37 of photoresist has been patterned and etched, creatingopenings 31 in the layer 37 of photoresist. Openings 31 partially exposethe surface of the barrier layer 36. Layer 37 of photoresist istypically applied to a thickness of between about 100 and 200 μm butmore preferably to a thickness of about 150 μm.

Layer 37 of photoresist Layer 37 is typically applied to a thickness ofbetween about 100 and 200 μm but more preferably to a thickness of about150 μm. The methods used for the deposition and development of the layer37 of photoresist uses conventional methods of photolithography.Photolithography is a common approach wherein patterned layers areformed by spinning on a layer of photoresist, projecting light through aphotomask with the desired pattern onto the photoresist to expose thephotoresist to the pattern, developing the photoresist, washing off theundeveloped photoresist, and plasma etching to clean out the areas wherethe photoresist has been washed away. The exposed resist may be renderedsoluble (positive working) and washed away, or insoluble (negativeworking) and form the pattern.

The deposited layer 37 of photoresist can, prior to patterning andetching, be cured or pre-baked further hardening the surface of thelayer 37 of photoresist.

Layer 37 of photoresist can be etched by applying O₂ plasma and then wetstripping by using H₂SO₄, H₂O₂ and NH₄OH solution. Sulfuric acid (H₂SO₄)and mixtures of H₂SO₄ with other oxidizing agents such as hydrogenperoxide (H₂O₂) are widely used in stripping photoresist after thephotoresist has been stripped by other means. Wafers to be stripped canbe immersed in the mixture at a temperature between about 100 degrees C.and about 150 degrees C. for 5 to 10 minutes and then subjected to athorough cleaning with deionized water and dried by dry nitrogen.Inorganic resist strippers, such as the sulfuric acid mixtures, are veryeffective in the residual free removal of highly postbaked resist. Theyare more effective than organic strippers and the longer the immersiontime, the cleaner and more residue free wafer surface can be obtained.

The photoresist layer 37 can also be partially removed using plasmaoxygen ashing and careful wet clean. The oxygen plasma ashing is heatingthe photoresist in a highly oxidized environment, such as an oxygenplasma, thereby converting the photoresist to an easily removed ash. Theoxygen plasma ashing can be followed by a native oxide dip for 90seconds in a 200:1 diluted solution of hydrofluoric acid.

FIG. 9 shows a cross section of the substrate 10 after a layer 38 ofpillar metal has been deposited (electroplated) over the surface of thelayer 36 of barrier material and bounded by openings 31 that have beencreated in the layer 37 of photoresist. Over the surface of the layers38 of metal, which will be referred to as pillar metal in view of therole these layers play in the completed structure of the solder bumps ofthe invention, layers 40 of under bump metal have been deposited usingdeposition methods such as electroplating.

Layer 36 preferably comprises titanium or copper and is preferablydeposited to a thickness of between about 500 and 2000 angstrom and morepreferably to a thickness of about 1000 Angstrom.

Layer 38 preferably comprise copper and is preferred to be applied to athickness of between about 10 and 100 μm but more preferably to athickness of about 50 μm.

Layer 40 preferably comprises nickel and is preferred to be applied to athickness of between about 1 and 10 μm but more preferably to athickness of about 4 μm.

FIG. 10 shows a cross section where the process of the invention hasfurther electroplated layers 42 of solder metal over the surface oflayers 40 of under bump metal (UBM) and bounded by the openings 31 thathave been created in the layer 37 of photoresist.

Layer 40 of UBM, typically of nickel and of a thickness between about 1and 10 μm, is electroplated over the layer 38 of pillar metal. The layer42 of bump metal (typically solder) is electroplated in contact with thelayer 40 of UBM to a thickness of between about 30 and 100 μm but morepreferably to a thickness of about 50 μm. The layers 38, 40 and 42 ofelectroplated metal are centered in the opening 31 that has been createdin the layer 37 of photoresist.

In the cross section that is shown in FIG. 11, it is shown that thepatterned layer 37 of photoresist has been removed from above thesurface of the barrier layer 36. The previously highlighted methods andprocessing conditions for the removal of a layer of photoresist can beapplied for the purpose of the removal of layer 37 that is shown incross section in FIG. 11. The invention further proceeds with thepartial etching of the pillar metal 38, as shown in cross section inFIG. 12, using methods of wet chemical etching or an isotropic dry etch,selective to the pillar metal material. It is clear that, by adjustingthe etching parameters, of which the time of etch is most beneficial,the diameter of the pillar metal 38 can be reduced by almost any desiredamount. The limitation that is imposed on the extent to which thediameter of the pillar metal 38 is reduced is not imposed by the wetetching process but by concerns of metal bump reliability andfunctionality. Too small a remaining diameter of the pillar metal 38will affect the robustness of the solder bumps while this may also havethe affect of increasing the resistance of the metal bump.

The final two processing steps of the invention, before the solder metalis reflowed, are shown in the cross section of FIGS. 13 and 14 andaffect the etching of the exposed surface of the barrier layer 36. Usingisotropic etching, FIG. 13, the exposed barrier layer is completelyremoved as is shown in FIG. 13. Using anisotropic etching, FIG. 14, theetching of the barrier layer is partially impeded by the presence of thecolumns 42 of solder metal.

It is believed that the undercut shape of pillar 38 will prevent wettingof pillar 38 and the UBM layer 40 during subsequent solder reflow. It isalso believed that exposure to air will oxidize the sidewalls of pillar38 and UBM layer 40 and therefore prevent wetting of these surfacesduring subsequent solder reflow. Optionally, the sidewalls of pillar 38and UBM layer 40 may be further oxidized by, for example, a thermaloxidation below reflow temperature of about 240 degrees C. such asheating in oxygen ambient at about 125 degrees C.

FIGS. 15 and 16 show the final cross section of the solder bump of theinvention after the solder metal has been reflowed. FIG. 15 correspondsto FIG. 13 while FIG. 16 corresponds to FIG. 14, this relating to theetch in the barrier layer 36 that has been explained using FIGS. 13 and14. It is noted that the etched layer 36 of barrier material that isshown in cross section in FIG. 15 corresponds to the etched layer ofbarrier material that is shown in FIG. 13. The same correspondenceexists between FIGS. 16 and 14.

The above summarized processing steps of electroplating that are usedfor the creation of a metal bump can be supplemented by the step ofcuring or pre-baking of the layer of photoresist after this layer hasbeen deposited.

To review and summarize the invention:

-   -   prior to and in preparation for the invention, a semiconductor        surface is provided, a layer of dielectric has been deposited        over the semiconductor surface, a contact pad has been provided        on the layer of dielectric, the contact pad has an exposed        surface, a layer of passivation has been deposited over a        semiconductor surface including the surface of said contact pad,        the layer of passivation has been patterned and etched, creating        an opening in the layer of passivation, partially exposing the        surface of the contact pad, the opening in the layer of        passivation is centered with respect to the contact pad    -   the invention starts with a barrier layer deposited over the        surface of the layer of passivation, making contact with the        contact pad through the opening created in the layer of        passivation    -   a layer of photoresist is deposited over the surface of the        barrier layer    -   the layer of photoresist is patterned and etched, creating an        opening through the layer of photoresist, the opening in the        layer of photoresist aligns with and is centered with respect to        the contact pad    -   in sequence are deposited, bounded by the opening created in the        layer of photoresist, a layer of pillar metal, a layer of under        bump metal and a layer of solder metal    -   the patterned layer of photoresist is removed from the surface        of the barrier layer    -   the layer of pillar metal is etched, reducing the diameter of        the pillar metal    -   the barrier layer is etched, using either isotropic or        anisotropic etching    -   the solder metal is reflowed.

The invention offers the following advantages:

-   -   ball height is a very important reliability concern; in order to        prevent thermal mismatch between overlying layers of a package        (such as a semiconductor device and an underlying printed        circuit board and the like) it is important to increase the        distance between overlying elements; the invention provides this        ability    -   a larger solder ball (for better thermal or reliability        performance) results in increased pitch, this is contrary to        state of the art design requirements    -   if small solder balls are used without providing height, it is        very difficult to underfill the small gaps    -   the solder is, using the invention, relatively far removed from        the semiconductor device which means that the application of        low-alpha solder is not required (alpha-particles create soft        errors in memory products, lead is known to emit alpha-particles        when lead decays)    -   for the pillar metal a metal needs to be selected that has good        conductivity and good ductility, such as copper. This is in        order to provide improved thermal performance by counteracting        thermal stress    -   the height of the pillar of the solder bump of the invention is        important and should be between about 10 to 100 μm in order to        achieve objectives of high stand-off    -   the metal that is used for the under bump metal layer is        important in that this metal must have good adhesion with the        overlying solder during solder reflow while this metal must not        solve too fast and in so doing form a barrier to the solder; in        addition, the UBM metal when exposed to air can form a layer of        protective oxide thus preventing solder wetting to the pillar        metal around the perimeter of the UBM metal during the reflow        process; nickel is therefore preferred for the UBM metal

Although the invention has been described and illustrated with referenceto specific illustrative embodiments thereof, it is not intended thatthe invention be limited to those illustrative embodiments. Thoseskilled in the art will recognize that variations and modifications canbe made without departing from the spirit of the invention. It istherefore intended to include within the invention all such variationsand modifications which fall within the scope of the appended claims andequivalents thereof.

1-6. (Canceled)
 7. A metal bump contact, comprising: a semiconductorsurface; a layer of dielectric overlying said semiconductor surface; acontact pad overlying said layer of dielectric, formed of a firstmaterial; a layer of passivation overlying said layer of dielectric,having an opening therein aligned with said contact pad; a barrier layerdeposited overlying said layer of passivation, including said openingcreated in said layer of passivation; a stack of three metal layers,aligned with the contact pad and having an equal diameter that is aboutequal to the surface area of the contact pad, starting with a layer incontact with the barrier layer, of a layer of pillar metal, a layer ofunder bump metal and a layer of solder metal wherein the diameter of thepillar metal has been reduced by a measurable amount and wherein thesolder metal has been reflowed; and
 8. The metal bump contact of claim 7wherein said barrier layer comprises titanium or copper applied to athickness of between about 500 and 2000 Angstrom and more preferably toa thickness of about 1000 Angstrom.
 9. (Canceled)
 10. The metal bumpcontact of claim 7 wherein said layer of pillar metal comprises copperapplied to a thickness of between about 10 and 100 μm and morepreferably to a thickness of about 50 μm.
 11. The metal bump contact ofclaim 7 wherein said layer of under bump metal comprises nickel appliedto a thickness of between about 1 and 10 μm and more preferably to athickness of about 4 μm.
 12. The metal bump contact of claim 7 whereinsaid layer of solder metal comprises solder applied to a thickness ofbetween about 30 and 100 μm and more preferably to a thickness of about50 μm. 13-36. (Canceled)
 37. The metal bump contact of claim 7 whereinsaid diameter of the pillar metal has been reduced by a measurableamount comprises reducing the diameter by more than 0.2 μm.
 38. Themetal bump contact of claim 7, further said under bump metal and saidpillar metal having been oxidized prior to said the solder metal beingreflowed. 39-43. (Canceled)
 44. The metal bump contact of claim 7 with aseed layer deposited over said barrier layer. 45-46. (Canceled)